Carvalho, Edson José deAlves, Marco Antônio RobertBraga, Edmundo da SilvaCescato, Lucila Helena Deliesposte2012-11-282012-11-282006CARVALHO, E. J. et al. SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. Microelectronics Journal , v. 37, p. 1265-1270, 2006. Disponível em: <https://www.sciencedirect.com/science/article/pii/S0026269206001959>. Acesso em: 28/11/2012.00262692http://www.repositorio.ufop.br/handle/123456789/1866We demonstrate that the use of a single SiO2 film, with thickness corresponding to one standing wave (SW) period allows the recording of deep photoresist structures on silicon substrates by laser interference, without use of any additional antireflecting coating. This condition corresponds just to the opposite thickness (half SW period) previously proposed for using the SiO2 films for phase-shifting the SW pattern. Theoretical and experimental results demonstrated that for the lithography of deep structures, the contrast of the SW pattern, the minimum light intensity of the SW pattern and the photoresist adhesion are the most important parameters of the process.en-USInterference lithographyDeep photoresist structuresStanding wave patternArtigo publicado em periodicoO periódico Microelectronics Journal concede permissão para depósito do artigo no Repositório Institucional da UFOP. Número da licença: 3306990459953.