Deposition of thin cobalt films onto silicon by galvanostatic and potentiostatic techniques.

dc.contributor.authorManhabosco, Taíse Matte
dc.contributor.authorMuller, Iduvirges Lourdes
dc.date.accessioned2017-03-10T13:05:25Z
dc.date.available2017-03-10T13:05:25Z
dc.date.issued2009
dc.description.abstractIn this study, thin cobalt films were electrodeposited directly onto n-Si (100) using two different electrodeposition techniques: galvanostatic and potentiostatic. The morphological difference between galvanostatic and potentiostatic deposits was observed by atomic force microscopy (AFM) and X-ray diffraction (XRD). Analysis of the deposits by an alternating gradient field magnetometer (AGFM) showed the influence of the electrodeposition process on the magnetic properties of the film.pt_BR
dc.identifier.citationMANHABOSCO, T. M.; MÜLLER, I. L. Deposition of thin cobalt films onto silicon by galvanostatic and potentiostatic techniques. Journal of Materials Science, v. 44, n. 1, p. 2931-2937, jun. 2009. Disponível em: <https://link.springer.com/article/10.1007/s10853-009-3388-9>. Acesso em: 10 mar. 2017.pt_BR
dc.identifier.doihttps://doi.org/10.1007/s10853-009-3388-9
dc.identifier.issn1573-4803
dc.identifier.urihttp://www.repositorio.ufop.br/handle/123456789/7349
dc.identifier.uri2https://link.springer.com/article/10.1007/s10853-009-3388-9pt_BR
dc.language.isoen_USpt_BR
dc.rightsrestritopt_BR
dc.titleDeposition of thin cobalt films onto silicon by galvanostatic and potentiostatic techniques.pt_BR
dc.typeArtigo publicado em periodicopt_BR
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