SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si.
dc.contributor.author | Carvalho, Edson José de | |
dc.contributor.author | Alves, Marco Antônio Robert | |
dc.contributor.author | Braga, Edmundo da Silva | |
dc.contributor.author | Cescato, Lucila Helena Deliesposte | |
dc.date.accessioned | 2012-11-28T17:32:24Z | |
dc.date.available | 2012-11-28T17:32:24Z | |
dc.date.issued | 2006 | |
dc.description.abstract | We demonstrate that the use of a single SiO2 film, with thickness corresponding to one standing wave (SW) period allows the recording of deep photoresist structures on silicon substrates by laser interference, without use of any additional antireflecting coating. This condition corresponds just to the opposite thickness (half SW period) previously proposed for using the SiO2 films for phase-shifting the SW pattern. Theoretical and experimental results demonstrated that for the lithography of deep structures, the contrast of the SW pattern, the minimum light intensity of the SW pattern and the photoresist adhesion are the most important parameters of the process. | pt_BR |
dc.identifier.citation | CARVALHO, E. J. et al. SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. Microelectronics Journal , v. 37, p. 1265-1270, 2006. Disponível em: <https://www.sciencedirect.com/science/article/pii/S0026269206001959>. Acesso em: 28/11/2012. | pt_BR |
dc.identifier.issn | 00262692 | |
dc.identifier.uri | http://www.repositorio.ufop.br/handle/123456789/1866 | |
dc.language.iso | en_US | pt_BR |
dc.rights.license | O periódico Microelectronics Journal concede permissão para depósito do artigo no Repositório Institucional da UFOP. Número da licença: 3306990459953. | |
dc.subject | Interference lithography | pt_BR |
dc.subject | Deep photoresist structures | pt_BR |
dc.subject | Standing wave pattern | pt_BR |
dc.title | SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si. | pt_BR |
dc.type | Artigo publicado em periodico | pt_BR |
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