Use este identificador para citar ou linkar para este item: http://www.repositorio.ufop.br/jspui/handle/123456789/7191
Título: Crystal-oriented wrinkles with origami-type junctions in few-layer hexagonal boron nitride.
Autor(es): Oliveira, Camilla Karla Brites Queiroz Martins de
Gomes, Egleidson Frederik do Amaral
Prado, Mariana C.
Souza, Thonimar Vieira de Alencar
Nascimento, Regiane do
Moreira, Leandro Malard
Batista, Ronaldo Junio Campos
Oliveira, Alan Barros de
Chacham, Helio
Paula, Ana Maria de
Neves, Bernardo Ruegger Almeida
Palavras-chave: 2D materials
Origami folding
Annealing
Data do documento: 2015
Referência: OLIVEIRA, C. K. B. Q. M de et al. Crystal-oriented wrinkles with origami-type junctions in few-layer hexagonal boron nitride. Nano Research, v. 8, n. 5, p. 1680-1688, 2015. Disponível em: <http://link.springer.com/article/10.1007/s12274-014-0665-y>. Acesso em: 23 jan. 2017.
Resumo: Understanding layer interplay is the key to utilizing layered heterostructures formed by the stacking of different two-dimensional materials for device applications. Boron nitride has been demonstrated to be an ideal substrate on which to build graphene devices with improved mobilities. Here we present studies on the morphology and optical response of annealed few-layer hexagonal boron nitride flakes deposited on a silicon substrate that reveal the formation of linear wrinkles along well-defined crystallographic directions. The wrinkles formed a network of primarily threefold and occasionally fourfold origami-type junctions throughout the sample, and all threefold junctions and wrinkles formed along the armchair crystallographic direction. Furthermore, molecular dynamics simulations yielded, through spontaneous symmetry breaking, wrinkle junction morphologies that are consistent with both the experimental results and the proposed origami-folding model. Our findings indicate that this morphology may be a general feature of several two-dimensional materials under proper stress-strain conditions, resulting in direct consequences in device strain engineering.
URI: http://www.repositorio.ufop.br/handle/123456789/7191
Link para o artigo: http://link.springer.com/article/10.1007/s12274-014-0665-y
DOI: https://doi.org/10.1007/s12274-014-0665-y
ISSN: 1998-0124
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