Use este identificador para citar ou linkar para este item: http://www.repositorio.ufop.br/jspui/handle/123456789/12595
Título: The use of complex impedance spectroscopy measurements for improving strain sensor performance.
Autor(es): Mapa, Ludmila Marotta
Golin, Alana Fernandes
Costa, Cleidinéia Cavalcante da
Bianchi, Rodrigo Fernando
Palavras-chave: Nanometer material
Screen-printable device
Biosensor
Alter-nating conductivity
Design optimization
Data do documento: 2019
Referência: MAPA, L. M. et al. The use of complex impedance spectroscopy measurements for improving strain sensor performance. Sensors and Actuators A-Physical, v. 293, p. 101-107, jul. 2019. Disponível em: <https://www.sciencedirect.com/science/article/abs/pii/S0924424718314419>. Acesso em: 03 jul. 2020.
Resumo: Ultrasensitive strain sensors have significant practical application in human-motion detection. However, there is still a challenge for developing strain sensors that are capable of detecting high strain and a high gauge factor (GF). The aim of this study was to investigate whether a semiconducting polymer and AC measurements are able to improve the GF of stretchable sensors. We employed complex impedance spectroscopy measurements to adjust the optimal operating frequency and the impedance component for improving the device performance of a polyaniline film on a flexible poly(vinyl chloride):diisononyl phthalate sub-strate. In the DC regime,the sensor revealed linearity and GF ∼18 at 46% strain. oreover,the frequency of 100 Hz corresponds to the ideal work re- gion to operate the device that unifies sensitivity and linearity, as well as to directly correlate GF and Z∗(100) data. The most surprising correlation is with GF from Z”(100), i.e. GF”(100), which is about 9 times higher than GF (DC regime) at 46% strain. The ColeDavidson approach is developed, in which Z’(f) and Z”(f) are calculated as functions of tensile stress. This model provides the correlation between GF”(100) and the electrical resistance and capacitance of the device, as well as the charge-carrier hopping distance dependence on the tensile stress.
URI: http://www.repositorio.ufop.br/handle/123456789/12595
Link para o artigo: https://www.sciencedirect.com/science/article/abs/pii/S0924424718314419
DOI: https://doi.org/10.1016/j.sna.2019.02.001
ISSN: 0924-4247
Aparece nas coleções:DEFIS - Artigos publicados em periódicos

Arquivos associados a este item:
Arquivo Descrição TamanhoFormato 
ARTIGO_UseComplexImpedance .pdf
  Restricted Access
2,54 MBAdobe PDFVisualizar/Abrir


Os itens no repositório estão protegidos por copyright, com todos os direitos reservados, salvo quando é indicado o contrário.